Wafer Sputtering Coater System For Metal/Dielectric Thin Film Deposition In Semiconductor/Optical

ItemNo :
Lith-PD-500C/600C
MOQ :
1
Compliance:
CE Certified
Warranty:
1 year
Delivery Time:
5 days
Email :
Louis@lithmachine.com

Contact Now

Product Details

Wafer Sputtering Coater System For Metal/Dielectric Thin Film Deposition In Semiconductor/Optical

Model: PD-500C/600C-Wafer Sputtering Coater System

Product Overview
The PD-500C/600C magnetron sputtering system is equipped with multiple sputtering sources, capable of depositing metallic, semiconducting, and dielectric materials. It supports the fabrication of multilayer thin films and co-sputtered alloy films with high precision.

Key Features

· Compact & Integrated Design: Space-saving layout with refined aesthetics, optional sample-loading functionality.

· High Uniformity Coating: Features 4× magnetron sputtering targets (2–4 inches), compatible with 2–8 inch wafers. Substrate holder ensures uniformity within ±3%–5% for 8-inch wafers.

· Flexible Control Options: Siemens PLC + touchscreen (manual/automatic) or PC + PLC full-automatic control.

Technical Specifications

· System Dimensions (L×W×H): 1400 × 1300 × 1900 mm

· Chamber Dimensions (L×W×H): 500 × 500 × 500 mm (PD-500C) / 600 × 600 × 500 mm (PD-600C)

· Substrate Stage: Max heating temperature 500–800°C

· Base Pressure: ≤5 × 10⁻⁵ Pa

· Pumping & Holding: Achieves 8 × 10⁻⁴ Pa within ≤30 min; pressure rise ≤8 Pa over 12 hours.

· Target Configuration: 4× sputter guns (2–3 inches or 2–4 inches), coating area 2–6 inches.

Applications & Advantages
Ideal for R&D and small-batch production, the PD-500C/600C excels in depositing high-quality, uniform thin films for optics, electronics, and functional coatings. Its modular control and excellent temperature/vacuum stability cater to advanced material research and industrial precision demands.

PD-500C/600C vs. Conventional Model

Feature	PD-500C/600C	Conventional Systems	Advantage
Uniformity (8-inch wafer)	±3%–5%	±5%–10% or worse	Higher film consistency for precision applications
System Footprint	Compact (1400×1300×1900 mm)	30–50% larger	Saves lab/cleanroom space
Substrate Heating	500–800°C	Typically 300–600°C	Supports high-temperature depositions (e.g., oxides, nitrides)
Base Vacuum	≤5×10⁻⁵ Pa	~1×10⁻⁴ Pa	Better for reactive sputtering, reduced contamination
Pressure Stability	≤8 Pa over 12 hours	Frequent drift (>10 Pa in hours)	Longer process stability
Control Options	PLC + Touchscreen or PC + PLC	Manual or basic PLC	Flexible automation, better reproducibility
Target Configuration	4× guns (2–4 inch)	Often 2–3 guns (2–3 inch)	Wider material selection, co-sputtering capability
Coating Area	2–8 inch wafers	Typically ≤6 inch	Broader substrate compatibility

Key Takeaways

· Precision & Consistency: Superior uniformity (±3–5%) vs. conventional (±5–10%).
· Compact & Efficient: 30% smaller footprint without sacrificing performance.
· High-Temp & Vacuum Stability: Enables advanced materials (e.g., optical coatings, semiconductors).
· Automation Ready: PC-controlled processes improve repeatability over manual systems.

Ideal For: R&D labs, semiconductor fabs, and optical coating producers needing high-repeatability, multi-material deposition in a space-efficient design.

PACKAGE:
1 Standard exported package: Internal anticollision protection, external export wooden box packaging.
2 Shipping by express, by air, by sea according to customers' requirements to find the most suitable way.
3 Responsible for the damage during the shipping process, will change the damage part for you for free.

DELIVERY TIME: 15-20 days after confirming order,detail delivery date should be decided according to production season and order quantity

HotTags : Dielectric Film Deposition Wafer Sputtering Coater Wafer Sputtering System Semiconductor Film Deposition Optical Film Deposition Optical Sputtering Coater